The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Jun. 11, 2014
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventor:
Jane Manning, Woodside, CA (US);
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); H01L 31/1864 (2013.01); H01L 21/225 (2013.01); H01L 21/2255 (2013.01); H01L 21/2256 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01);
Abstract
Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.