The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 10, 2012
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Honda Motor Co., Ltd, Tokyo, JP;
Neil Dasgupta, San Francisco, CA (US);
Hee Joon Jung, Palo Alto, CA (US);
Andrei Iancu, Stanford, CA (US);
Rainer J. Fasching, Mill Valley, CA (US);
Friedrich B. Prinz, Woodside, CA (US);
Hitoshi Iwadate, Palo Alto, CA (US);
Shicheng Xu, Stanford, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Honda Motor Co., LTD., Tokyo, JP;
Abstract
A method of fabricating single-crystalline metal silicide nanowires for anti-reflective electrodes for photovoltaics is provided that includes exposing a surface of a metal foil to oxygen or hydrogen at an elevated temperature, and growing metal silicide nanowires on the metal foil surface by flowing a silane gas mixture over the metal foil surface at the elevated temperature, where spontaneous growth of the metal silicide nanowires occur on the metal foil surface, where the metal silicide nanowires are post treated for use as an electrode in a photovoltaic cell or used directly as the electrode in the photovoltaic cell.