The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 24, 2009
Bill Phan, San Jose, CA (US);
Renhua Zhang, Sunnyvale, CA (US);
John Gorman, Los Gatos, CA (US);
Omar Sidelkheir, Sunnyvale, CA (US);
Jean Patrice Rakotoniaina, Berlin, DE;
Alain Paul Blosse, Belmont, CA (US);
Martin Kaes, Berlin, DE;
Bill Phan, San Jose, CA (US);
Renhua Zhang, Sunnyvale, CA (US);
John Gorman, Los Gatos, CA (US);
Omar Sidelkheir, Sunnyvale, CA (US);
Jean Patrice Rakotoniaina, Berlin, DE;
Alain Paul Blosse, Belmont, CA (US);
Martin Kaes, Berlin, DE;
Silicor Materials Inc., San Jose, CA (US);
Abstract
A polarization resistant solar cell using an oxygen-rich interface layer is provided. The oxygen-rich interface layer may be comprised of SiON, which may have a graded profile that varies between oxygen-rich proximate to the solar cell to nitrogen-rich distal to the solar cell. A silicon oxide passivation layer may be interposed between the solar cell and the SiONgraded dielectric layer. The graded SiONdielectric layer may be replaced with a non-graded SiONdielectric layer and a SiN AR coating.