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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9166056 B1

PDFFull Text
Date of Patent:
Oct. 20, 2015

Filed:

Jul. 12, 2013

Thin-film semiconductor device and method of manufacturing the same

Applicants:

Panasonic Corporation, Osaka, JP;

Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;

Inventors:

Hiroshi Hayashi, Hyogo, JP;

Takahiro Kawashima, Osaka, JP;

Genshiro Kawachi, Chiba, JP;

Assignees:

PANASONIC CORPORATION, Osaka, JP;

PANASONIC LIQUID DISPLAY CO., LTD., Hyogo, JP;

Attorney:

Greenblum & Bernstein P.L.C.

Primary Examiner:

Zandra Smith

Assistant Examiner:

John M Parker

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/76 (2006.01); H01L 31/036 (2006.01); H01L 31/112 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78678 (2013.01); H01L 29/41733 (2013.01); H01L 29/66765 (2013.01); H01L 29/78636 (2013.01);
Abstract

In a thin-film semiconductor device, a semiconductor layer has a bandgap energy of 1.6 eV or less, an insulating layer formed above the semiconductor layer includes: a first insulating layer region placed outside of a first contact opening and above one end of a gate electrode; a second insulating layer region placed outside of a second contact opening and above the other end of the gate electrode which opposes the one end; and a third insulating layer region being rectangular and placed between the first contact opening and the second contact opening.

Find Patent Forward Citations

Hayashi, Hiroshi. (2015). Thin-film semiconductor device and method of manufacturing the same (U.S. Patent No. 9166056). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9166056

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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