The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Dec. 19, 2014
Applicant:

Altera Corporation, San Jose, CA (US);

Inventors:

Chun Lee Ler, Tangkak, MY;

Shuxian Chen, Fremont, CA (US);

Jeffrey T. Watt, Palo Alto, CA (US);

Assignee:

Altera Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 11/16 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7855 (2013.01); H01L 27/0629 (2013.01); H01L 29/93 (2013.01);
Abstract

A multiple gate semiconductor structure is disclosed having a thin segment of semiconductor with first and second major surfaces that are opposite one another, a first gate on the first major surface of the segment, a second gate on the second major surface of the segment opposite the first gate, a first differential input coupled to the first gate, and a second differential input coupled to the second gate. Preferably the semiconductor structure is symmetrical about a plane that extends through the thin segment between the first and second major surfaces. When a first voltage of a first polarity is applied to the first input and a second voltage of the same magnitude as that of the first voltage but of opposite polarity is applied to the second input, a virtual ground is established in the structure near its center of the segment.


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