The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 07, 2011
Applicants:
Sorin Ioan Cristoloveanu, Seyssinet, FR;
Noel Rodriguez, Armilla, ES;
Francisco Gamiz, Armilla, ES;
Inventors:
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); H01L 29/78 (2006.01); G11C 11/404 (2006.01); H01L 21/84 (2006.01); H01L 27/108 (2006.01); G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); G11C 7/00 (2013.01); G11C 11/404 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 27/10802 (2013.01); H01L 27/10844 (2013.01); H01L 27/10847 (2013.01); H01L 29/7841 (2013.01); G11C 2211/4016 (2013.01); H01L 27/10826 (2013.01);
Abstract
The invention relates to a memory cell consisting of an isolated MOS transistor having a drain (), a source () and a body region covered with an insulated gate (), in which the body region is divided through its thickness into two separate regions () of opposite conductivity types extending parallel to the plane of the gate, the body region closest to the gate having the opposite conductivity type to that of the drain/source.