The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Jun. 03, 2014
Applicant:

Silicon Works Co., Ltd, Daejeon-si, KR;

Inventors:

Young Jin Woo, Daejeon-si, KR;

Kong Soon Park, Daejeon-si, KR;

Young Sik Kim, Daejeon-si, KR;

Assignee:

SILICON WORKS CO., LTD, Daejeon-Si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H03K 17/102 (2013.01); H03K 17/6874 (2013.01); H01L 27/088 (2013.01); H01L 29/1083 (2013.01);
Abstract

The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (V) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.


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