The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 06, 2012
Kohji Ishikura, Kanagawa, JP;
Kohji Ishikura, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
A semiconductor apparatus invention includes a substrate (), an epitaxial layer () formed on the substrate (), a gate electrode (), a source electrode (), and a drain electrode () that are formed on the epitaxial layer. The source electrode () and the drain electrode () each include at least two first divided electrodes that are formed to extend in parallel to each other in a first direction, inter-electrode distances Ps and Pd between the first divided electrodes are greater than or equal to a radius of an abnormal growth portion formed on a surface of the epitaxial layer (), and widths of the first divided electrodes are less than or equal to the radius of the abnormal growth portion.