The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Mar. 23, 2012
Jing-yi Yan, Hsinchu County, TW;
Chih-chieh Hsu, Hsinchu, TW;
Hsiao-chiang Yao, Kaohsiung, TW;
Chu-yin Hung, Hsinchu, TW;
Jing-Yi Yan, Hsinchu County, TW;
Chih-Chieh Hsu, Hsinchu, TW;
Hsiao-Chiang Yao, Kaohsiung, TW;
Chu-Yin Hung, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.