Semiconductor memory devices and methods for fabricating the same

Abstract

A semiconductor memory device includes a substrate having a cell region and a peripheral region, a gate stack including a plurality of insulating layers and a plurality of gates alternately stacked on the cell region of the substrate, a stress buffer layer on the gate stack, a vertical channel that extends vertically through the gate stack and is electrically connected to the substrate, a memory layer wrapped around the vertical channel. A bit line electrically connected to the vertical channel may be provided on the gate stack. In a method of fabricating a semiconductor device, the buffer stress layer is formed directly on an upper insulating layer of a stack whose shape is altered to form the gate stack to inhibit warping of the substrate during fabrication of the device.