The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 17, 2012
Infineon Technologies Ag, Neubiberg, DE;
Peter Nelle, Munich, DE;
Markus Zundel, Egmating, DE;
Infineon Technology AG, Neubiberg, DE;
Abstract
One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. A width wof a transistor mesa region of each of the plurality of transistor cells and a width wof a first trench of each of the plurality of transistor cells satisfy the following relationship: w<1.5×w. The semiconductor device further includes semiconductor diodes. At least one of the semiconductor diodes is arranged between first and second parts of the plurality of transistor cells and includes a diode mesa region adjoining opposing walls of second trenches. A depth dof the first trench and a depth dof the second trenches differ by at least 20%.