The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Apr. 26, 2013
Applicant:

Industrial Technology Research Institute, Chutung, TW;

Inventors:

Yung-Chih Liang, New Taipei, TW;

Chih-Ting Yeh, Zhudong Township, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); H01L 27/0251 (2013.01); H01L 27/0262 (2013.01); H01L 27/0266 (2013.01); H01L 27/0285 (2013.01); H01L 2924/0002 (2013.01);
Abstract

One embodiment of the disclosure provides an electrostatic discharge protection circuit. The electrostatic discharge protection circuit includes a p-type field effect transistor, a capacitance device and an n-type field effect transistor. The p-type field effect transistor has a source coupled to an input/output terminal, a gate coupled to a first node and a drain coupled to a second node. The capacitance device has a first terminal coupled to a first rail and a second terminal coupled to the first node. The n-type field effect transistor has a source coupled to the first rail, a gate coupled to the second node and a drain coupled to the first node.


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