The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Sep. 27, 2013
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/48 (2013.01); H01L 27/10855 (2013.01); H01L 27/10885 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a first conductive structure including a first conductive pattern that is formed over a substrate, a second conductive structure formed adjacent to a sidewall of the first conductive structure, and an insulation structure including an air gap that is formed between the first conductive structure and the second conductive structure, wherein the second conductive structure includes a second conductive pattern, an ohmic contact layer that is formed over the second conductive pattern, and a third conductive pattern that is formed over the ohmic contact layer and is separated from the first conductive pattern through the air gap.