The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Aug. 29, 2012
Applicants:
Shirou Ozaki, Yamato, JP;
Masayuki Takeda, Atsugi, JP;
Inventors:
Shirou Ozaki, Yamato, JP;
Masayuki Takeda, Atsugi, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/31 (2006.01); H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/20 (2006.01); H01L 23/29 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 23/291 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/4236 (2013.01); H01L 29/517 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.