The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 13, 2012
Applicant:
Lg Innotek Co., Ltd., Seoul, KR;
Inventor:
Seok Min Kang, Seoul, KR;
Assignee:
LG INNOTEK CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/02 (2006.01); C30B 25/02 (2006.01); C23C 16/32 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); C23C 16/0227 (2013.01); C23C 16/325 (2013.01); C30B 25/02 (2013.01); C30B 29/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02628 (2013.01);
Abstract
A method for deposition of silicon carbide according to an embodiment includes preparing a wafer in a susceptor; introducing first etching gas into the susceptor; introducing second etching gas into the susceptor; producing an intermediate compound by introducing a reactive raw material into the susceptor; and forming a silicon carbide epitaxial layer on the wafer by reacting the intermediate compound with the wafer.