The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Jun. 24, 2011
Feng Miao, Mountain View, CA (US);
Jianhua Yang, Palo Alto, CA (US);
John Paul Strachan, Millbrae, CA (US);
Wei Yi, Mountain View, CA (US);
Gilberto Medeiros Ribeiro, Palo Alto, CA (US);
R Stanley Williams, Portola Valley, CA (US);
Feng Miao, Mountain View, CA (US);
Jianhua Yang, Palo Alto, CA (US);
John Paul Strachan, Millbrae, CA (US);
Wei Yi, Mountain View, CA (US);
Gilberto Medeiros Ribeiro, Palo Alto, CA (US);
R Stanley Williams, Portola Valley, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.