The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 13, 2013
Qualcomm Incorporated, San Diego, CA (US);
Chirag Gulati, Kota/Rajasthan, IN;
Ashish Akhilesh, Bangalore/Karnataka, IN;
Venkatasubramanian Narayanan, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A memory device biasing circuit is disclosed, the circuit having a pair of semiconductor devices coupled to receive a supply voltage having a supply voltage level suitable for operating a memory device in an active mode and operable for providing an adjustable biased voltage to the memory device that is greater than a minimal voltage level for operating the memory device in a data retention mode. The pair of semiconductor devices includes a first semiconductor device; and, a second semiconductor device that includes an opposite type of semiconductor device than the first semiconductor device such that the pair of semiconductor devices includes each of an N-type semiconductor device and a P-type semiconductor device. The memory device biasing circuit further includes a bias adjustment circuit coupled to the second semiconductor device and configured to adjust the operation of the second semiconductor device based on the supply voltage.