The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Feb. 26, 2013
Applicant:
Honeywell International Inc., Morristown, NJ (US);
Inventors:
Keith W. Golke, Minneapolis, MN (US);
David K. Nelson, Medicine Lake, MN (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/40 (2006.01); G11C 13/00 (2006.01); G11C 13/02 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
G11C 11/40 (2013.01); B82Y 10/00 (2013.01); G11C 13/0002 (2013.01); G11C 13/0069 (2013.01); G11C 13/025 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/79 (2013.01);
Abstract
A desired current through a carbon nano tube (CNT) element of a CNT memory device can be controlled by a wordline voltage, and a voltage on the CNT common node can be held constant. The common node can be constant at a source voltage if a p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) is used in the CNT memory device, or the common node can be constant at a supply voltage if an n-channel MOSFET is used in the CNT memory device.