The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Mar. 05, 2009
Dexin Wang, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Dimitar Dimitrov, Edina, MN (US);
Dexin Wang, Eden Prairie, MN (US);
Haiwen Xi, Prior Lake, MN (US);
Yuankai Zheng, Bloomington, MN (US);
Dimitar Dimitrov, Edina, MN (US);
Seagate Technology LLC, Cupertino, CA (US);
Abstract
Magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation at zero field and zero current) of the associated ferromagnetic layers aligned perpendicular to the wafer plane, or 'out-of-plane'. A memory cell may have a ferromagnetic free layer, a first pinned reference layer and a second pinned reference layer, each having a magnetic anisotropy perpendicular to the substrate. The free layer has a magnetization orientation perpendicular to the substrate that is switchable by spin torque from a first orientation to an opposite second orientation.