The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Nov. 12, 2012
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Yoshimizu Moriya, Osaka, JP;
Noboru Nakanishi, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
An active matrix substrate (A) includes a thin film transistor (), a scanning line () substantially parallel to a first direction, a signal line () substantially parallel to a second direction which is orthogonal to the first direction, a first interlayer insulating layer () covering the thin film transistor, a lower layer electrode () provided on the first interlayer insulating layer, a dielectric layer () provided on the lower layer electrode, and an upper layer electrode () overlapping at least a portion of the lower layer electrode via the dielectric layer. A first contact hole () for allowing the upper layer electrode to be electrically connected to a drain electrode () of the thin film transistor includes a first aperture () formed in the first interlayer insulating layer and a second aperture () formed in the dielectric layer. A width of the first aperture along one of the first direction and the second direction is smaller than a width of the second aperture along the one direction. When viewed from the normal direction of the substrate, a portion of the contour of the second aperture is located inside the contour of the first aperture.