The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Feb. 14, 2012
Simon Vassant, Paris, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
Jean-luc Pelouard, Paris, FR;
Jean-jacques Greffet, Verrières le Buisson, FR;
Alexandre Archambault, Paris, FR;
François Marquier, Longjumeau, FR;
Simon Vassant, Paris, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
Jean-Luc Pelouard, Paris, FR;
Jean-Jacques Greffet, Verrières le Buisson, FR;
Alexandre Archambault, Paris, FR;
François Marquier, Longjumeau, FR;
Abstract
According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal () having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal () that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impedance of the crystal between the opposing ends of the interface.