The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Dec. 07, 2011
Applicants:
Seiji Sarayama, Miyagi, JP;
Hirokazu Iwata, Miyagi, JP;
Akihiro Fuse, Miyagi, JP;
Inventors:
Assignee:
RICOH COMPANY, LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C30B 9/00 (2006.01); C30B 17/00 (2006.01);
U.S. Cl.
CPC ...
C30B 9/00 (2013.01); C30B 17/00 (2013.01); C30B 29/40 (2013.01); Y10T 117/1092 (2015.01);
Abstract
A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.
Sarayama, Seiji. (2015). Crystal growth apparatus and manufacturing method of group iii nitride crystal (U.S. Patent No. 9163325). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9163325
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile