The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Sep. 26, 2014
Hitachi Kokusai Electric Inc., Tokyo, JP;
Tetsuo Yamamoto, Toyama, JP;
Kazuhiro Morimitsu, Toyama, JP;
Kazuyuki Toyoda, Toyama, JP;
Kenji Ono, Toyama, JP;
Tadashi Takasaki, Toyama, JP;
Ikuo Hirose, Toyama, JP;
Takafumi Sasaki, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.