The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Jul. 28, 2011
Go Takeda, Machida, JP;
Hisayuki Hashimoto, Machida, JP;
Masayoshi Ichikawa, Machida, JP;
Tomohiro Nomiyama, Machida, JP;
Suzuya Yamada, Machida, JP;
Go Takeda, Machida, JP;
Hisayuki Hashimoto, Machida, JP;
Masayoshi Ichikawa, Machida, JP;
Tomohiro Nomiyama, Machida, JP;
Suzuya Yamada, Machida, JP;
DENKI KAGAKU KOGYO KABUSHIKI KAISHA, Tokyo, JP;
Abstract
β-SiAlON represented by a general formula SiAlONwith Eu dissolved therein, whose spin density corresponding to absorption g=2.00±0.02 at 25° C. obtained by the electron spin resonance method is equal to or lower than 6.0×10spins/g. A method of manufacturing the β-SiAlON includes: a mixing step of mixing β-SiAlON materials; a baking step of baking the β-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500° C. to a baking temperature of the baking step at a rate equal to or lower than 2° C./min.; an annealing step of annealing the β-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the β-SiAlON having undergone the annealing step. The objective of the present invention is to provide β-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the β-SiAlON, and a light-emitting device using the β-SiAlON.