The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2015

Filed:

Feb. 17, 2012
Applicants:

Ki-bum Lee, Monmouth Junction, NJ (US);

Sung Myung, Highland Park, NJ (US);

Aniruddh Solanki, South Plainfield, NJ (US);

Inventors:

Ki-Bum Lee, Monmouth Junction, NJ (US);

Sung Myung, Highland Park, NJ (US);

Aniruddh Solanki, South Plainfield, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/551 (2006.01); G01N 33/553 (2006.01); B82Y 30/00 (2011.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); G01N 27/4146 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); G01N 27/4145 (2013.01);
Abstract

A field effect transistor (FET) with a source electrode and a drain electrode distanced apart from each other on a semi-conductor substrate, and a gate electrode consisting of a uniform layer of reduced graphene oxide encapsulated semiconductor nanoparticles (rGO-NPs), wherein the gate electrode is disposed between and contacts both the source and drain electrodes. Methods of making and assay methods using the FETs are also disclosed, including methods in which the rGO-NPs are functionalized with binding partners for biomarkers.


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