The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2015
Filed:
Apr. 13, 2012
Applicants:
Nicolas Demierre, Corseaux, CH;
Stephan Gamper, Lausanne, CH;
Inventors:
Nicolas Demierre, Corseaux, CH;
Stephan Gamper, Lausanne, CH;
Assignee:
MYCARTIS NV, Zwijnaarde/Ghent, BE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); H01L 21/027 (2006.01); B81C 99/00 (2010.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
B44C 1/227 (2013.01); B81C 99/008 (2013.01); G03F 7/00 (2013.01); H01L 21/0272 (2013.01); B01J 2219/00497 (2013.01); B01J 2219/00502 (2013.01); B01J 2219/00536 (2013.01); B01J 2219/00554 (2013.01); B01J 2219/00556 (2013.01); B01J 2219/00576 (2013.01); B01J 2219/00612 (2013.01); B01J 2219/00635 (2013.01); B01J 2219/00637 (2013.01); B01J 2219/00722 (2013.01);
Abstract
Silicon microcarriers suitable for fluorescent assays as a well as a method of producing such microcarriers are provided. The method includes the steps of providing a SOI wafer having a bottom layer of monocristalline silicone, an insulator layer and a bottom layer of monocristalline silicon, delineating microparticles, etching away the insulator layer and then depositing an oxide layer on the wafer still holding the microparticles before finally lifting-off the microparticles.