The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Oct. 09, 2013
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

Jinsung Choi, Greensboro, NC (US);

Marcelo Jorge Franco, Summerfield, NC (US);

Assignee:

RF Micro Devices, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 11/12 (2006.01); H03F 3/19 (2006.01); H03F 1/02 (2006.01); H04B 1/034 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H03F 1/0261 (2013.01);
Abstract

Integrated pulse shaping biasing circuitry for a radio frequency (RF) power amplifier includes a square wave signal generator and an inverted ramp signal generator. The square wave signal generator and the inverted ramp signal generator are coupled in parallel between an input node and current summation circuitry. The square wave signal generator generates a square wave signal. The inverted ramp signal generator generates an inverted ramp signal. The current summation circuitry receives the generated square wave signal and the inverted ramp signal, and combines the signals to generate a pulse shaped biasing signal for an RF power amplifier. The square wave signal generator, the inverted ramp signal generator, and the current summation circuitry are monolithically integrated on a single semiconductor die.


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