The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Jan. 08, 2014
Applicant:
National Tsing Hua University, Hsinchu, TW;
Inventors:
Yu-Lun Chueh, Hsinchu, TW;
Chi-Hsin Huang, Hsinchu, TW;
Assignee:
National Tsing Hua University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); B82Y 30/00 (2011.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1608 (2013.01); B82Y 30/00 (2013.01); H01L 27/2418 (2013.01); H01L 27/2463 (2013.01);
Abstract
A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.