The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 20, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Eun-Kyung Yim, Seoul, KR;
In-Gyu Baek, Seoul, KR;
Jang-Eun Lee, Suwon-si, KR;
Se-Chung Oh, Suwon-si, KR;
Kyung-Tae Nam, Suwon-si, KR;
Jin-Shi Zhao, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/112 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01);
Abstract
A nonvolatile memory device includes a bottom electrode on a semiconductor substrate, a data storage layer on the bottom electrode, the data storage layer including a transition metal oxide, and a switching layer provided on a top surface and/or a bottom surface of the data storage layer, wherein a bond energy of material included in the switching layer and oxygen is more than a bond energy of a transition metal in the transition metal oxide and oxygen.