The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
May. 10, 2014
Applicant:
SK Hynix Inc., Icheon-Si, KR;
Inventors:
Min-Suk Lee, Icheon-Si, KR;
Chang-Hyup Shin, Icheon-Si, KR;
Assignee:
SK hynix Inc., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G11C 27/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); G11C 13/0004 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1675 (2013.01); G11C 27/00 (2013.01); G11C 2213/52 (2013.01);
Abstract
This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes a lower electrode, a variable resistance element over the lower electrode, an upper electrode disposed over the variable resistance element and including metal, and a metal compound layer configured to surround a side of the upper electrode. The metal compound layer includes a compound of the metal of the upper electrode.