The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Jan. 13, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Kuang-Ping Chao, Hsinchu, TW;

Wen-Luh Liao, Hsinchu, TW;

Fu-Chun Tsai, Hsinchu, TW;

Shih-I Chen, Hsinchu, TW;

Chia-Liang Hsu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 33/38 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed.


Find Patent Forward Citations

Loading…