The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Sep. 11, 2013
Applicant:
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Inventors:
Jong Kyun You, Ansan-si, KR;
Chang Yeon Kim, Ansan-si, KR;
Da Hye Kim, Ansan-si, KR;
Tae Hyuk Im, Ansan-si, KR;
Tae Gyun Kim, Ansan-si, KR;
Young Wug Kim, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01L 33/00 (2010.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01);
Abstract
Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.