The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Nov. 05, 2013
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Katsushi Akita, Itami, JP;
Takashi Ishizuka, Itami, JP;
Kei Fujii, Itami, JP;
Youichi Nagai, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layergrown on the absorption layercontains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer. In the group III-V compound semiconductor photo detector, the InP layercontains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layergenerate holes, the silicon contained in the InP layercompensates for the generated carriers. As a result, the second portionof the InP layerhas sufficient n-type conductivity.