The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 05, 2013
Hyundai Motor Company, Seoul, KR;
Jong Seok Lee, Suwon-si, KR;
Kyoung-Kook Hong, Hwaseong-si, KR;
Dae Hwan Chun, Gwangmyung-si, KR;
Youngkyun Jung, Seoul, KR;
HYUNDAI MOTOR COMPANY, Seoul, KR;
Abstract
A schottky barrier diode includes: an n− type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n− type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n− type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n− type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n− type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate.