The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
May. 21, 2012
Kentaro Saito, Kanagawa, JP;
Kazumasa Yanagisawa, Kanagawa, JP;
Yasushi Ishii, Kanagawa, JP;
Koichi Toba, Kanagawa, JP;
Kentaro Saito, Kanagawa, JP;
Kazumasa Yanagisawa, Kanagawa, JP;
Yasushi Ishii, Kanagawa, JP;
Koichi Toba, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal filmand a silicon filmover the metal film. In an upper end part of the metal film, a metal oxide portionis formed by oxidation of a part of the metal film. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal filmand the silicon filmover the metal film