The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Feb. 20, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Frank Pfirsch, Munich, DE;
Dorothea Werber, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/266 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/407 (2013.01); H01L 29/66348 (2013.01);
Abstract
A semiconductor device includes a drift zone of a first conductivity type in a semiconductor body. Controllable cells are configured to form a conductive channel connected with the drift zone in a first state. First zones of the first conductivity type as well as second zones and a third zone of a complementary second conductivity type are between the drift zone and a rear side electrode, respectively. The first, second and third zones directly adjoin the rear side electrode. The third zone is larger and has a lower mean emitter efficiency than the second zones.