The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Mar. 20, 2014
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Komaki Inoue, Kanagawa, JP;
Yutaka Hoshino, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
The reliability of a semiconductor device including a MOSFET formed over an SOI substrate is improved. A manufacturing method of the semiconductor device is simplified. A semiconductor device with n-channel MOSFETsQn formed over an SOI substrate SB includes an n-type semiconductor region formed as a diffusion layer over an upper surface of a support substrate under a BOX film, and a contact plug CTelectrically coupled to the n-type semiconductor region and penetrating an element isolation region, which can control the potential of the support substrate. At a plane of the SOI substrate SB, the n-channel MOSFETsQn each extend in a first direction, and are arranged between the contact plugs CTformed adjacent to each other in the first direction.