The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 31, 2013
Applicant:
Industrial Technology Research Institute, Hsinchu, TW;
Inventors:
Chih-Wei Hu, Taoyuan County, TW;
Chen-Zi Liao, Nantou County, TW;
Hsun-Chih Liu, Taipei, TW;
Rong Xuan, Hsinchu County, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 29/06 (2006.01); H01L 29/267 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0688 (2013.01); H01L 29/267 (2013.01); H01L 29/32 (2013.01);
Abstract
A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer, in which the buffer layer includes n sub-buffer layers where n≧2, and each of the sub-buffer layers has island structures. The nitride semiconductor layer is disposed on the buffer layer.