The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Sep. 14, 2012
Applicants:

Beom-yong Kim, Gyeonggi-do, KR;

Yun-hyuck Ji, Gyeonggi-do, KR;

Seung-mi Lee, Gyeonggi-do, KR;

Inventors:

Beom-Yong Kim, Gyeonggi-do, KR;

Yun-Hyuck Ji, Gyeonggi-do, KR;

Seung-Mi Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/768 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/768 (2013.01); H01L 28/60 (2013.01); H01L 29/66477 (2013.01); H01L 29/94 (2013.01); H01L 21/76864 (2013.01); H01L 28/92 (2013.01);
Abstract

A method for fabricating a semiconductor device includes forming a metal layer over a substrate, forming a capping layer over the metal layer, and densifying the metal layer through a heat treatment.


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