The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Sep. 05, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Kyoichi Suguro, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/085 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1616 (2013.01); H01L 45/1675 (2013.01);
Abstract
According to one embodiment, a semiconductor device comprises a first electrode; a second electrode containing a metal element; and a variable resistance element formed between the first electrode and the second electrode. The variable resistance element comprises an insulating first film disposed on a side of the first electrode and containing oxygen; and a second film disposed on the side of the second electrode and containing an element having a diffusion coefficient larger than the diffusion coefficient of the metal element in the first film and an electronegativity higher than the electronegativity of the metal element.