The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Nov. 04, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Seong-Min Wang, Yongin, KR;
Ki-Wan Ahn, Yongin, KR;
Joo-Sun Yoon, Yongin, KR;
Ki-Hong Kim, Yongin, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/336 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/467 (2006.01); H01L 21/477 (2006.01); H01L 21/44 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 21/0206 (2013.01); H01L 21/32136 (2013.01); H01L 21/44 (2013.01); H01L 21/467 (2013.01); H01L 21/477 (2013.01); H01L 27/1225 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 2227/323 (2013.01);
Abstract
An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.