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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9159743 B1

PDFFull Text
Date of Patent:
Oct. 13, 2015

Filed:

Nov. 08, 2012

Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance

Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventor:

Jonathan Christian Crandall, Marion, IA (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:

Knobbe, Martens, Olson & Bear LLP

Primary Examiner:

Pablo Tran

Int. Cl.
CPC ...
H04B 1/28 (2006.01); H01L 29/74 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H04B 1/38 (2015.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 29/0692 (2013.01); H01L 29/66568 (2013.01); H01L 29/78 (2013.01); H04B 1/38 (2013.01); H01L 29/41758 (2013.01);
Abstract

Disclosed are devices and methods related to radio-frequency (RF) switches having silicon-on-insulator (SOI) field-effect transistors (FETs). In some embodiments, an RF switch can include an FET with shaped source, drain, and gate selected to yield a reduced per-area value of resistance in linear operating region (Rds-on). In some implementations, a plurality of such FETs can be connected in series to allow use of SOI technology in high power RF switching applications while maintaining a relatively small die size.

Find Patent Forward Citations

Crandall, Jonathan. (2015). Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance (U.S. Patent No. 9159743). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9159743

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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