The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Oct. 02, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Youichi Nogami, Tokyo, JP;

Hidetoshi Koyama, Tokyo, JP;

Yoshitsugu Yamamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/485 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4855 (2013.01); H01L 23/481 (2013.01); H01L 23/482 (2013.01); H01L 23/4821 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having opposed main and back surfaces; first and second electrodes in a device region of the substrate, and spaced apart from each other; a metal film on the main surface and joined to the second electrode; an air gap between part of the main surface and the metal film, enveloping the first electrode, and having an opening; a cured resin closing the opening; a liquid repellent film increasing contact angle of the resin, relative to contact angles on the substrate and the metal film; a first metal film joined to the metal film, covering the metal film and the cured resin, and joined to an outer peripheral region of the substrate, at a periphery of the device region; and a second metal film on the back surface and connected to the first electrode through a via hole penetrating the substrate.


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