The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Aug. 27, 2013
SK Hynix Inc., Gyeonggi-do, KR;
Hyo-Seok Lee, Gyeonggi-do, KR;
Seung-Jin Yeom, Gyeonggi-do, KR;
Sung-Won Lim, Gyeonggi-do, KR;
Seung-Hee Hong, Gyeonggi-do, KR;
Nam-Yeal Lee, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming an insulation layer over a substrate; forming an open portion in the insulation layer; forming a sacrificial spacer over sidewalls of the open portion; forming, over the sacrificial spacer, a first conductive pattern in a lower section of the open portion; forming an ohmic contact layer over the first conductive pattern; forming an air gap by removing the sacrificial spacer; capping the air gap by forming a barrier layer over the ohmic contact layer; and forming a second conductive pattern over the barrier layer to fill an upper section of the open portion.