The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Jun. 26, 2014
Applicant:
Fujifilm Corporation, Minato-ku, Tokyo, JP;
Inventors:
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 49/02 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30608 (2013.01); H01L 21/02068 (2013.01); H01L 21/3081 (2013.01); H01L 21/32134 (2013.01); H01L 28/92 (2013.01); H01L 27/10852 (2013.01);
Abstract
A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.