The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 12, 2014
SK Hynix Inc., Gyeonggi-do, KR;
Min-Soo Kim, Gyeonggi-do, KR;
Dong-Sun Sheen, Gyeonggi-do, KR;
Seung-Ho Pyi, Gyeonggi-do, KR;
Sung-Jin Whang, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes. The non-volatile memory device may improve erase operation characteristics by suppressing back tunneling of electrons by substituting a charge blocking layer interposed between a gate electrode and a charge storage layer with an air gap, and a method for fabricating the non-volatile memory device.