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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9159553 B1

PDFFull Text
Date of Patent:
Oct. 13, 2015

Filed:

Aug. 23, 2010

Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface

Applicants:

Hiroaki Ohta, Goleta, CA (US);

Feng Wu, Goleta, CA (US);

Anurag Tyagi, Goleta, CA (US);

Arpan Chakraborty, Goleta, CA (US);

James S. Speck, Goleta, CA (US);

Steven P. Denbaars, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Erin C. Young, Santa Barbara, CA (US);

Inventors:

Hiroaki Ohta, Goleta, CA (US);

Feng Wu, Goleta, CA (US);

Anurag Tyagi, Goleta, CA (US);

Arpan Chakraborty, Goleta, CA (US);

James S. Speck, Goleta, CA (US);

Steven P. DenBaars, Goleta, CA (US);

Shuji Nakamura, Santa Barbara, CA (US);

Erin C. Young, Santa Barbara, CA (US);

Assignee:

The Regents of the University of California, Oakland, CA (US);

Attorney:

Gates & Cooper LLP

Primary Examiner:

Jessica Stultz

Assistant Examiner:

Delma R Forde

Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 21/02 (2006.01); B82Y 20/00 (2011.01); H01L 33/00 (2010.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); B82Y 20/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 33/0075 (2013.01); H01S 5/3201 (2013.01); H01S 5/3202 (2013.01); H01S 5/34333 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); H01L 33/32 (2013.01); H01S 5/2009 (2013.01); H01S 5/2201 (2013.01); H01S 2301/173 (2013.01);
Abstract

A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

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