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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9159549 B1

PDFFull Text
Date of Patent:
Oct. 13, 2015

Filed:

May. 26, 2011

Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

Applicants:

Atsushi Ogasawara, Saitama, JP;

Kazuhiko Ito, Saitama, JP;

Koji Ito, Saitama, JP;

Inventors:

Atsushi Ogasawara, Saitama, JP;

Kazuhiko Ito, Saitama, JP;

Koji Ito, Saitama, JP;

Assignee:

SHINDENGEN ELECTRIC MANUFACTURING CO., LTD., Tokyo, JP;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Moazzam Hossain

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/29 (2006.01); C03C 3/066 (2006.01); C03C 3/093 (2006.01); C03C 8/04 (2006.01); C03C 8/24 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 23/31 (2006.01); H01L 21/762 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); C03C 3/066 (2013.01); C03C 3/093 (2013.01); C03C 8/04 (2013.01); C03C 8/24 (2013.01); H01L 21/02123 (2013.01); H01L 21/02172 (2013.01); H01L 21/02318 (2013.01); H01L 21/76232 (2013.01); H01L 23/291 (2013.01); H01L 23/3178 (2013.01); H01L 23/564 (2013.01); H01L 29/0661 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a glass composition for protecting a semiconductor junction which contains at least SiO, AlO, ZnO, CaO and 3 mol % to 10 mol % of BO, and substantially contains none of Pb, P, As, Sb, Li, Na and K. It is preferable that a content of SiOfalls within a range of 32 mol % to 48 mol %, a content of AlOfalls within a range of 9 mol % to 13 mol %, a content of ZnO falls within a range of 18 mol % to 28 mol %, a content of CaO falls within a range of 15 mol % to 23 mol %, and a content of BOfalls within a range of 3 mol % to 10 mol %.

Find Patent Forward Citations

Ogasawara, Atsushi. (2015). Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device (U.S. Patent No. 9159549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9159549

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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