The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2015

Filed:

Jun. 21, 2013
Applicant:

Sandisk Enterprise Ip Llc, Milpitas, CA (US);

Inventors:

Seungjune Jeon, Milpitas, CA (US);

Charles Kwong, Redwood City, CA (US);

Jiangli Zhu, Sunnyvale, CA (US);

Assignee:

SANDISK ENTERPRISE IP LLC., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 16/26 (2006.01); G11C 29/02 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 29/021 (2013.01); G11C 29/028 (2013.01); G11C 11/5642 (2013.01);
Abstract

The reliability with which data can be read from a storage medium, such as flash memory storage medium, is enhanced by updating an upper limit of a reading threshold voltage window for a respective portion of the storage medium. For each memory cell in the respective portion of the storage medium, a memory controller is configured to perform a plurality of sensing operations and obtain results from the plurality of sensing operations, where the plurality of sensing operations includes sensing operations using a predefined range of offsets from a previously established reading threshold voltage. The memory controller is further configured to determine the updated upper limit of the reading threshold voltage window based on the-results from the plurality of sensing operations, and store the updated upper limit of the reading threshold voltage window for the respective portion of the storage medium.


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