The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Sep. 14, 2012
Do-young Kim, Gyeonggi-do, KR;
Do-Young Kim, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes a first selection transistor, a second selection transistor, and a plurality of memory cells serially coupled between the first selection transistor and the second selection transistor. A reading method of the non-volatile memory device includes applying a read voltage to a gate of a selected memory cell; applying a first pass voltage to a gate of a memory cell adjacent to the selected memory cell, and applying a second pass voltage to gates of the other memory cells, wherein the selected memory cell is in one program state among first to Tprogram states in a direction that threshold voltage is increased, where T is a natural number greater than 2, and the first pass voltage is decreased as the selected memory cell goes toward the Tprogram state.